- Package / Case :
- Series :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 200V 3.8A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) | 0 | 1 | N-Channel | 200V | 3.8A (Ta), 20A (Tc) | 99.9 mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | 1380pF @ 50V | 10V | ±20V | 3.6W (Ta), 8.3W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 5.1A 8PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | 200V | 5.1A (Ta) | 55 mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | 2290pF @ 100V | 10V | ±20V | 3.6W (Ta), 8.3W (Tc) | ||||
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146
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.5A TO220-3 | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO-220-3 | 0 | 1 | N-Channel | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | 75W (Tc) |