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- Current - Continuous Drain (Id) @ 25°C :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 55V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | P-Channel | Schottky Diode (Isolated) | 55V | 3.4A (Ta) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | D2PAK | 0 | 1 | N-Channel | - | 55V | 75A (Tc) | 8 mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | 2880pF @ 25V | 4.5V, 10V | ±16V | 130W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 1 | N-Channel | - | 55V | 3.8A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | ||||
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416
In-stock
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STMicroelectronics | MOSFET N CH 55V 110A TO-220 | TO-220-3 | DeepGATE™, STripFET™ VI | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220 | 0 | 1 | N-Channel | - | 55V | 110A (Tc) | 5.2 mOhm @ 60A, 10V | 4V @ 250µA | 120nC @ 10V | 8350pF @ 25V | 10V | ±20V | 150W (Tc) | ||||
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2,372
In-stock
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STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 2.5V @ 250µA | 100nC @ 4.5V | 4350pF @ 25V | 5V, 10V | ±16V | 300W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N and P-Channel | 2W | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||||||
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76,200
In-stock
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Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2.4W | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 1V @ 250µA | 44nC @ 10V | 780pF @ 25V |
