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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V | 2.5W (Tc) | |||
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233
In-stock
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STMicroelectronics | MOSFET N-CH 30V 80A TO220 | TO-220-3 | DeepGATE™, STripFET™ VI | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 1 | N-Channel | - | 30V | 80A (Tc) | 3.3 mOhm @ 40A, 10V | 2.5V @ 250µA | 40nC @ 4.5V | 4040pF @ 25V | 4.5V, 10V | ±20V | 110W (Tc) | |||
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163
In-stock
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STMicroelectronics | MOSFET N-CH 30V 100A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ III | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 30V | 100A (Tc) | 3.2 mOhm @ 50A, 10V | 2.5V @ 250µA | 88nC @ 5V | 6200pF @ 25V | 4.5V, 10V | ±16V | 300W (Tc) | |||
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2,372
In-stock
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STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 2.5V @ 250µA | 100nC @ 4.5V | 4350pF @ 25V | 5V, 10V | ±16V | 300W (Tc) | |||
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1,738
In-stock
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STMicroelectronics | MOSFET N-CH 30V 75A TO-220AB | TO-220-3 | DeepGATE™, STripFET™ VI | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220 | 0 | 1 | N-Channel | - | 30V | 75A (Tc) | 5.9 mOhm @ 37.5A, 10V | 2.5V @ 250µA | 23.8nC @ 4.5V | 2030pF @ 25V | 4.5V, 10V | ±20V | 60W (Tc) |
