Build a global manufacturer and supplier trusted trading platform.
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
IRLML6302TR
GET PRICE
RFQ
14,500
In-stock
Infineon Technologies MOSFET P-CH 20V 780MA SOT-23 TO-236-3, SC-59, SOT-23-3 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro3™/SOT-23 0 1 P-Channel - 20V 780mA (Ta) 600 mOhm @ 610mA, 4.5V 1.5V @ 250µA 3.6nC @ 4.45V 97pF @ 15V 2.7V, 4.5V ±12V 540mW (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 20V 4.4A 6-TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(TSOP-6) 0 1 P-Channel - 20V 4.4A (Ta) 65 mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15nC @ 4.5V 1079pF @ 10V 2.5V, 4.5V ±12V 2W (Ta)
Page 1 / 1