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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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254
In-stock
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STMicroelectronics | MOSFET N-CH 600V 13A TO-247 | TO-247-3 | FDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | TO-247 | 0 | 1 | N-Channel | - | 600V | 13A (Tc) | 290 mOhm @ 6.5A, 10V | 5V @ 250µA | 34nC @ 10V | 1030pF @ 50V | 10V | ±25V | 110W (Tc) | ||||
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1,505
In-stock
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STMicroelectronics | MOSFET N CH 620V 5.5A I2PAKFP | TO-262-3 Full Pack, I²Pak | SuperMESH3™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | I2PAKFP (TO-281) | 0 | 1 | N-Channel | - | 620V | 5.5A (Tc) | 1.2 Ohm @ 2.8A, 10V | 4.5V @ 50µA | 34nC @ 10V | 875pF @ 50V | 10V | ±30V | 30W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 4.9A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 30V | 4.9A | 58 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V |
