- Manufacture :
- Package / Case :
- Series :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,500
In-stock
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STMicroelectronics | MOSFET N-CH 650V 15A I2PAK-FP | TO-262-3 Full Pack, I²Pak | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | I2PAKFP (TO-281) | 0 | 1 | N-Channel | - | 650V | 15A (Tc) | 270 mOhm @ 7.5A, 10V | 4V @ 250µA | 44nC @ 10V | 1280pF @ 50V | 10V | ±25V | 30W (Tc) | ||||
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76,200
In-stock
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Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2.4W | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 1V @ 250µA | 44nC @ 10V | 780pF @ 25V |
