Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 30V 10A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1 P-Channel - 30V 10A (Ta) 20 mOhm @ 5.6A, 10V 1V @ 250µA 92nC @ 10V 1700pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
Default Photo
Per Unit
$3.450
RFQ
1,385
In-stock
STMicroelectronics MOSFET N-CH 600V 13A I2PAK FP TO-262-3 Full Pack, I²Pak SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 600V 13A (Tc) 550 mOhm @ 4.5A, 10V 4.5V @ 100µA 92nC @ 10V 2030pF @ 25V 10V ±30V 35W (Tc)
Page 1 / 1