Build a global manufacturer and supplier trusted trading platform.
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N CH 40V 85A PQFN 5X6 8-PowerTDFN HEXFET®, StrongIRFET™ Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 40V 85A (Tc) 3.3 mOhm @ 50A, 10V 3.9V @ 100µA 98nC @ 10V 3174pF @ 25V 6V, 10V ±20V 78W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N CH 40V 100A PQFN5X6 8-VQFN Exposed Pad HEXFET®, StrongIRFET™ Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 40V 100A (Tc) 1.4 mOhm @ 100A, 10V 3.9V @ 150µA 194nC @ 10V 6419pF @ 25V 6V, 10V ±20V 156W (Tc)
Default Photo
Per Unit
$4.870
RFQ
22
In-stock
Infineon Technologies MOSFET N CH 40V 195A TO220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole - Obsolete TO-220AB 0 1 N-Channel - 40V 195A (Tc) 1.3 mOhm @ 100A, 10V 3.9V @ 250µA 460nC @ 10V 14240pF @ 25V 6V, 10V ±20V -
Default Photo
Per Unit
$1.790
RFQ
89
In-stock
Infineon Technologies MOSFET N-CH 75V 85A TO262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 1 N-Channel - 75V 85A (Tc) 6.7 mOhm @ 51A, 10V 3.7V @ 100µA 130nC @ 10V 4440pF @ 25V 6V, 10V ±20V 140W (Tc)
Page 1 / 1