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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 55V 75A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount - Obsolete D2PAK 0 1 N-Channel - 55V 75A (Tc) 8 mOhm @ 52A, 10V 3V @ 250µA 60nC @ 5V 2880pF @ 25V 4.5V, 10V ±16V 130W (Tc)
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Per Unit
$4.470
RFQ
1,465
In-stock
STMicroelectronics MOSFET N CH 650V 18A I2PAKFP TO-262-3 Full Pack, I²Pak MDmesh™ V Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 650V 18A (Tc) 190 mOhm @ 9A, 10V 5V @ 250µA 45nC @ 10V 1345pF @ 100V 10V ±25V 130W (Tc)
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