- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.8A 2X2 PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | P-Channel | - | 20V | 7.2A (Ta), 15A (Tc) | 31 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 12nC @ 10V | 877pF @ 10V | 2.5V, 4.5V | ±12V | 2.1W (Ta), 9.6W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.7A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | N-Channel | - | 30V | 8.7A (Ta), 19A (Tc) | 15.5 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1019pF @ 25V | 2.5V, 4.5V | ±12V | 2.1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 10A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | N-Channel | - | 20V | 10A (Ta), 12A (Tc) | 11.7 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | 1110pF @ 10V | 2.5V, 4.5V | ±12V | 1.98W (Ta), 9.6W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.8A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-TSDSON-6 | 0 | 1 | N-Channel | - | 30V | 8.8A (Ta), 19A (Tc) | 16 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | 600pF @ 25V | 4.5V, 10V | ±20V | 2.1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 9.9A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | N-Channel | - | 25V | 9.9A (Ta), 21A (Tc) | 13 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 10.4nC @ 10V | 653pF @ 10V | 4.5V, 10V | ±20V | 2.1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 6A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | P-Channel | - | 30V | 6A (Ta), 13A (Tc) | 37 mOhm @ 7.8A, 10V | 2.4V @ 25µA | 13nC @ 10V | 580pF @ 25V | 4.5V, 10V | ±20V | 2.1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 4.5A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN Dual (2x2) | 0 | 1 | 2 N-Channel (Dual) | 1.5W | Logic Level Gate | 20V | 4.5A | 45 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | ||||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 2.3A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN Dual (2x2) | 0 | 1 | 2 P-Channel (Dual) | 1.4W | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V |