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Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$2.800
RFQ
56
In-stock
STMicroelectronics MOSFET N-CH 600V 13A TO-220FP TO-220-3 Full Pack MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220FP 0 1 N-Channel - 600V 13A (Tc) 285 mOhm @ 6.5A, 10V 4V @ 250µA 35nC @ 10V 1000pF @ 50V 10V ±25V 30W (Tc)
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Per Unit
$4.460
RFQ
649
In-stock
STMicroelectronics MOSFET N-CH 600V 13A TO-220FP TO-220-3 Full Pack SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220FP 0 1 N-Channel - 600V 13A (Tc) 550 mOhm @ 4.5A, 10V 4.5V @ 100µA 92nC @ 10V 2030pF @ 25V 10V ±30V 35W (Tc)
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