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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 20V 6.5A 6-TSOP SOT-23-6 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(SOT23-6) 0 1 N-Channel - 20V 6.5A (Ta) 30 mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22nC @ 5V 1310pF @ 15V 2.5V, 4.5V ±12V 2W (Ta)
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Infineon Technologies MOSFET P-CH 20V 5.6A 6-TSOP SOT-23-6 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(SOT23-6) 0 1 P-Channel - 20V 5.6A (Ta) 50 mOhm @ 5.1A, 4.5V 1.2V @ 250µA 16nC @ 5V 1079pF @ 10V 2.5V, 4.5V ±12V 2W (Ta)
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Infineon Technologies MOSFET P-CH 20V 2.4A 6-TSOP SOT-23-6 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(SOT23-6) 0 1 P-Channel - 20V 2.4A (Ta) 200 mOhm @ 1.6A, 4.5V 700mV @ 250µA 8.8nC @ 4.5V 210pF @ 15V 2.7V, 4.5V ±12V 1.7W (Ta)
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Infineon Technologies MOSFET P-CH 30V 2.3A 6-TSOP SOT-23-6 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(SOT23-6) 0 1 P-Channel - 30V 2.3A (Ta) 200 mOhm @ 1.6A, 10V 1V @ 250µA 11nC @ 10V 170pF @ 25V 4.5V, 10V ±20V 1.7W (Ta)
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