Build a global manufacturer and supplier trusted trading platform.
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$3.570
RFQ
63
In-stock
STMicroelectronics MOSFET N-CH 600V 11A TO-247 TO-247-3 MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 4V @ 250µA 17nC @ 10V 580pF @ 100V 10V ±25V 110W (Tc)
Default Photo
Per Unit
$4.750
RFQ
512
In-stock
STMicroelectronics MOSFET N-CH 600V 13A TO-247 TO-247-3 MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 600V 13A (Tc) 280 mOhm @ 6.5A, 10V 4V @ 250µA 21.5nC @ 10V 791pF @ 100V 10V ±25V 110W (Tc)
Default Photo
Per Unit
$15.000
RFQ
395
In-stock
STMicroelectronics MOSFET N-CH 600V 68A TO247 TO-247-3 MDmesh™ II Plus Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 600V 68A (Tc) 40 mOhm @ 34A, 10V 4V @ 250µA 118nC @ 10V 5200pF @ 100V 10V ±25V 450W (Tc)
Page 1 / 1