- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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9,070
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 23A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | 160W (Tc) | ||
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2,502
In-stock
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Infineon Technologies | MOSFET N-CH 100V 120A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | 280W (Tc) | |||
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1,703
In-stock
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Infineon Technologies | MOSFET N-CH 100V 72A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 100V | 72A (Tc) | 14 mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | 6160pF @ 25V | 10V | ±20V | 190W (Tc) | |||
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3,942
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 100V | 57A (Tc) | 25 mOhm @ 28A, 10V | 4V @ 250µA | 190nC @ 10V | 3000pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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1,219
In-stock
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Infineon Technologies | MOSFET P-CH 100V 23A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 13A, 10V | 4V @ 250µA | 97nC @ 10V | 1300pF @ 25V | 10V | ±20V | 140W (Tc) | |||
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4,886
In-stock
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Infineon Technologies | MOSFET N-CH 100V 195A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 100V | 195A (Tc) | 2.6 mOhm @ 180A, 10V | 4V @ 250µA | 540nC @ 10V | 19860pF @ 50V | 10V | ±20V | 520W (Tc) |
