- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | MOSFET N-CH 800V 11A TO-247 | TO-247-3 | MDmesh™ | Tube | MOSFET (Metal Oxide) | Through Hole | -65°C ~ 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 800V | 11A (Tc) | 400 mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6nC @ 10V | 1630pF @ 25V | 10V | ±30V | 150W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 900V 11A TO-247 | TO-247-3 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 900V | 11A (Tc) | 880 mOhm @ 5.5A, 10V | 4.5V @ 100µA | 152nC @ 10V | 3500pF @ 25V | 10V | ±30V | 230W (Tc) | |||
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63
In-stock
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STMicroelectronics | MOSFET N-CH 600V 11A TO-247 | TO-247-3 | MDmesh™ II Plus | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 600V | 11A (Tc) | 380 mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | 580pF @ 100V | 10V | ±25V | 110W (Tc) | |||
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1,537
In-stock
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Infineon Technologies | MOSFET N-CH 900V 11A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 900V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | 1700pF @ 100V | 10V | ±20V | 156W (Tc) |
