- Manufacture :
- Series :
- Technology :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | STMicroelectronics | MOSFET N-CH 1.2KV TO247-3 | TO-247-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 200°C (TJ) | Active | HiP247™ | 0 | 1 | N-Channel | - | 1200V | 65A (Tc) | 69 mOhm @ 40A, 20V | 3V @ 1mA | 122nC @ 20V | 1900pF @ 400V | 20V | +25V, -10V | 318W (Tc) | |||
|
|
|
45
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 65A TO-247 | TO-247-3 | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | TO-247 | 0 | 1 | N-Channel | - | 600V | 65A (Tc) | 49 mOhm @ 32.5A, 10V | 4V @ 250µA | 174nC @ 10V | 5800pF @ 100V | 10V | ±25V | 450W (Tc) | |||
|
|
|
54
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 65A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 200V | 65A (Tc) | 25 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | 330W (Tc) |
