- Series :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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9,110
In-stock
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Infineon Technologies | MOSFET N-CH 60V 257A TO247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.5 mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | 10V | ±20V | 375W (Tc) | |||
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525
In-stock
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Infineon Technologies | MOSFET N-CH 40V 195A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.7 mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | 4.5V, 10V | ±20V | 341W (Tc) | |||
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107
In-stock
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Infineon Technologies | MOSFET N-CH 40V 195A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.7 mOhm @ 195A, 10V | 4V @ 250µA | 330nC @ 10V | 8920pF @ 25V | 10V | ±20V | 380W (Tc) | |||
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15,000
In-stock
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Infineon Technologies | MOSFET N CH 40V 195A TO247 | TO-247-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.3 mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | 14240pF @ 25V | 6V, 10V | ±20V | 366W (Tc) | |||
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335
In-stock
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Infineon Technologies | MOSFET N CH 60V 195A TO247 | TO-247-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2 mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | 6V, 10V | ±20V | 341W (Tc) | |||
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4,886
In-stock
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Infineon Technologies | MOSFET N-CH 100V 195A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 100V | 195A (Tc) | 2.6 mOhm @ 180A, 10V | 4V @ 250µA | 540nC @ 10V | 19860pF @ 50V | 10V | ±20V | 520W (Tc) | |||
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4,083
In-stock
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Infineon Technologies | MOSFET N-CH 75V 195A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 75V | 195A (Tc) | 1.85 mOhm @ 195A, 10V | 4V @ 250µA | 570nC @ 10V | 19230pF @ 50V | 10V | ±20V | 520W (Tc) |
