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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$4.500
RFQ
30
In-stock
STMicroelectronics MOSFET N-CH 600V 13A TO-247 TO-247-3 Automotive, AEC-Q101, MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 600V 13A (Tc) 285 mOhm @ 6.5A, 10V 4V @ 250µA 35nC @ 10V 1000pF @ 50V 10V ±25V 110W (Tc)
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Per Unit
$3.220
RFQ
73
In-stock
STMicroelectronics MOSFET N-CH 650V 20A TO247 TO-247-3 MDmesh™ M2 Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247 0 1 N-Channel - 650V 20A (Tc) 180 mOhm @ 10A, 10V 4V @ 250µA 35nC @ 10V 1440pF @ 100V 10V ±25V 170W (Tc)
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