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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$11.120
RFQ
518
In-stock
STMicroelectronics MOSFET N-CH 650V 24A TO-247 MDmesh™ V Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-247-3 0 1 N-Channel - 650V 24A (Tc) 119 mOhm @ 12A, 10V 5V @ 250µA 72nC @ 10V 3320pF @ 100V 10V ±25V 150W (Tc)
STW10NK80Z
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RFQ
12,500
In-stock
STMicroelectronics MOSFET N-CH 800V 9A TO-247 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 800V 9A (Tc) 900 mOhm @ 4.5A, 10V 4.5V @ 100µA 72nC @ 10V 2180pF @ 25V 10V ±30V 160W (Tc)
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