Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$4.500
RFQ
30
In-stock
STMicroelectronics MOSFET N-CH 600V 13A TO-247 Automotive, AEC-Q101, MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 600V 13A (Tc) 285 mOhm @ 6.5A, 10V 4V @ 250µA 35nC @ 10V 1000pF @ 50V 10V ±25V 110W (Tc)
Default Photo
Per Unit
$6.340
RFQ
602
In-stock
STMicroelectronics MOSFET N-CH 500V 14A TO-247 MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247-3 0 1 N-Channel - 500V 14A (Tc) 250 mOhm @ 7A, 10V 4V @ 250µA 34nC @ 10V 1000pF @ 50V 10V ±25V 110W (Tc)
Page 1 / 1