- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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54
In-stock
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Infineon Technologies | MOSFET N-CH 200V 65A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 200V | 65A (Tc) | 25 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | 330W (Tc) | |||
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2,191
In-stock
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STMicroelectronics | MOSFET N-CH 650V 58A TO-247 | TO-247-3 | MDmesh™ V | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 650V | 58A (Tc) | 45 mOhm @ 29A, 10V | 5V @ 250µA | 143nC @ 10V | 6420pF @ 100V | 10V | ±25V | 330W (Tc) | |||
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198
In-stock
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STMicroelectronics | MOSFET N-CH 600V 39A TO-247 | TO-247-3 | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 600V | 44A (Tc) | 70 mOhm @ 20A, 10V | 4V @ 250µA | 124nC @ 10V | 4285pF @ 50V | 10V | ±25V | 330W (Tc) | |||
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482
In-stock
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STMicroelectronics | MOSFET N-CH 650V TO-247 | TO-247-3 | Automotive, AEC-Q101, MDmesh™ V | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 650V | 46A (Tc) | 49 mOhm @ 23A, 10V | 5V @ 250µA | 142nC @ 10V | 6420pF @ 100V | 10V | ±25V | 330W (Tc) |
