- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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271
In-stock
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STMicroelectronics | MOSFET N-CH 600V 21A | TO-220-3 Full Pack | MDmesh™ DM2 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | - | 600V | 21A (Tc) | 160 mOhm @ 10.5A, 10V | 5V @ 250µA | 34nC @ 10V | 1500pF @ 100V | 10V | ±25V | 30W (Tc) | |||
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3,059
In-stock
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Infineon Technologies | MOSFET N-CH 55V 21A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 55V | 21A (Tc) | 40 mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | 37W (Tc) |
