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5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 80A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 80A (Tc) 7.9 mOhm @ 43A, 10V 2.2V @ 55µA 134nC @ 10V 6475pF @ 25V 5V, 10V ±16V 105W (Tc)
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Infineon Technologies MOSFET N-CH 55V 80A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 80A (Tc) 5.9 mOhm @ 56A, 10V 2.2V @ 80µA 196nC @ 10V 9417pF @ 25V 5V, 10V ±16V 136W (Tc)
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Infineon Technologies MOSFET N-CH 55V 80A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 80A (Tc) 4.8 mOhm @ 69A, 10V 2.2V @ 115µA 273nC @ 10V 13060pF @ 25V 5V, 10V ±16V 165W (Tc)
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Per Unit
$3.230
RFQ
1,975
In-stock
STMicroelectronics MOSFET N-CH 55V 80A TO-220 TO-220-3 STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 55V 80A (Tc) 8 mOhm @ 40A, 10V 2.5V @ 250µA 110nC @ 5V 4050pF @ 25V 5V, 10V ±15V 300W (Tc)
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Per Unit
$3.480
RFQ
132
In-stock
STMicroelectronics MOSFET N-CH 55V 80A TO-220 TO-220-3 STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 55V 80A (Tc) 6.5 mOhm @ 40A, 10V 1V @ 250µA 136nC @ 5V 4850pF @ 25V 5V, 10V ±16V 300W (Tc)
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