Build a global manufacturer and supplier trusted trading platform.
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$8.110
VIEW
RFQ
STMicroelectronics MOSFET N-CH 950V 17.5A TO-247 SuperMESH5™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 950V 17.5A (Tc) 330 mOhm @ 9A, 10V 5V @ 100µA 40nC @ 10V 1500pF @ 100V 10V ±30V 250W (Tc)
Default Photo
Per Unit
$6.900
RFQ
391
In-stock
STMicroelectronics MOSFET N-CH 600V 14A TO-247 FDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247-3 0 1 N-Channel - 600V 14A (Tc) 299 mOhm @ 7A, 10V 5V @ 250µA 40nC @ 10V 1250pF @ 50V 10V ±25V 125W (Tc)
Page 1 / 1