- Manufacture :
- Series :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 10A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | 0 | 0 | 6525 | N-Channel | - | 55V | 10A (Tc) | 140 mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | 265pF @ 25V | 4.5V, 10V | ±16V | 28W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 10A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I-PAK | 0 | 0 | 75 | N-Channel | - | 55V | 10A (Tc) | 140 mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | 265pF @ 25V | 4.5V, 10V | ±16V | 28W (Tc) | |||
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1,877
In-stock
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Infineon Technologies | MOSFET COOLMOS 700V TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 0 | 1 | N-Channel | - | 700V | 10A (Tc) | 450 mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1nC @ 400V | 424pF @ 400V | 10V | ±16V | 50W (Tc) | |||
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4,743
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 0 | 1 | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 48W (Tc) | |||
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4,629
In-stock
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onsemi | MOSFET N-CH 100V 10A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | I-PAK | 110880 | 0 | 1 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 5A, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | 5V, 10V | ±20V | 2.5W (Ta), 40W (Tc) |