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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 50A TO251-3 TO-251-3 Short Leads, IPak, TO-251AA OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 30V 50A (Tc) 7.5 mOhm @ 30A, 10V 2.2V @ 250µA 18nC @ 10V 1900pF @ 15V 4.5V, 10V ±20V 47W (Tc)
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$1.442
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STMicroelectronics MOSFET N-CH 800V 6.5A IPAK TO-251-3 Short Leads, IPak, TO-251AA MDmesh™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active I-PAK 0 3000 N-Channel - 800V 6.5A (Tc) 1.05 Ohm @ 3.25A, 10V 5V @ 250µA 18nC @ 10V 620pF @ 25V 10V ±30V 90W (Tc)
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