- Manufacture :
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- Mounting Type :
- Operating Temperature :
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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 3.8W (Ta), 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 150V 13A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1000 | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 150V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 3000 | P-Channel | - | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 3.8W (Ta), 110W (Tc) | |||
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9,497
In-stock
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Infineon Technologies | MOSFET P-CH 150V 13A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | P-Channel | - | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | |||
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1,522
In-stock
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Infineon Technologies | MOSFET P-CH 150V 27A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | - | 150V | 27A (Tc) | 150 mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | 2210pF @ 25V | 10V | ±20V | 250W (Tc) | |||
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1,288
In-stock
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Infineon Technologies | MOSFET P-CH 150V 13A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | |||
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3,000
In-stock
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Infineon Technologies | MOSFET P-CH 150V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 3000 | P-Channel | - | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | |||
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2,500
In-stock
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onsemi | MOSFET P-CH 150V | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | 0 | 2500 | P-Channel | - | 150V | 2.2A (Ta) | 255 mOhm @ 2.2A, 10V | 4V @ 250µA | 16nC @ 10V | 1130pF @ 75V | 6V, 10V | ±25V | 1W (Ta) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET P-CH 150V 0.7A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | - | 150V | 700mA (Ta) | 2.4 Ohm @ 420mA, 10V | 5V @ 250µA | 9nC @ 10V | 150pF @ 25V | 10V | ±20V | 2.5W (Ta) | |||
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20,000
In-stock
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Infineon Technologies | MOSFET P-CH 150V 2.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | - | 150V | 2.2A (Ta) | 240 mOhm @ 1.3A, 10V | 5V @ 250µA | 49nC @ 10V | 1280pF @ 25V | 10V | ±20V | 2.5W (Ta) | |||
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24,000
In-stock
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Infineon Technologies | MOSFET P-CH 150V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | P-Channel | - | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | |||
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24,000
In-stock
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onsemi | MOSFET P-CH 150V 2A POWER33 | 8-PowerWDFN | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-MLP (3.3x3.3) | 0 | 3000 | P-Channel | - | 150V | 2A (Ta), 8.4A (Tc) | 307 mOhm @ 2A, 10V | 4V @ 250µA | 13nC @ 10V | 885pF @ 75V | 6V, 10V | ±25V | 2.3W (Ta), 40W (Tc) | |||
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21,000
In-stock
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onsemi | MOSFET P-CH 150V 3A MLP 3.3SQ | 8-PowerWDFN | QFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-MLP (3.3x3.3) | 0 | 3000 | P-Channel | - | 150V | 3A (Tc) | 1.5 Ohm @ 1.5A, 10V | 5V @ 250µA | 9nC @ 10V | 270pF @ 25V | 10V | ±30V | 42W (Tc) |
