- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
-
- 10 A (2)
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- Rds On - Drain-Source Resistance :
-
- 0.0016 Ohms (1)
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- 20 mOhms (2)
- 20.5 mOhms (1)
- 21 mOhms (1)
- 22 mOhms (5)
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- 25 mOhms (3)
- 27 mOhms (1)
- 28 mOhms (2)
- 3 mOhms (3)
- 3.1 mOhms (1)
- 3.2 mOhms (3)
- 3.3 mOhms (10)
- 3.4 mOhms (1)
- 3.5 mOhms (2)
- 3.6 mOhms (2)
- 3.7 mOhms (2)
- 3.8 mOhms (2)
- 30 mOhms (1)
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- 35 mOhms (1)
- 4 mOhms (1)
- 4.1 mOhms (1)
- 4.2 mOhms (4)
- 4.6 mOhms (2)
- 4.7 mOhms (3)
- 4.8 mOhms (2)
- 4.9 mOhms (1)
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- 9 mOhms (2)
- 9.3 mOhms (1)
- 9.4 mOhms (1)
- 9.6 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10.3 nC (1)
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- 73.3 nC (1)
- 74.9 nC (1)
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- 81 nC (1)
- 82 nC (5)
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- 85 nC (6)
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- 88 nC (2)
- 90 nC (1)
- 91 nC (4)
- 98 nC (2)
- Applied Filters :
210 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
90
In-stock
|
IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||
|
|
5,391
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 17.2 A | 63 mOhms | Enhancement | ||||||
|
|
4,225
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 32 A | 27 mOhms | Enhancement | QFET | |||||
|
|
2,967
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 16 mOhms | Enhancement | ||||||
|
|
6,325
In-stock
|
IR / Infineon | MOSFET 60V DUAL N-CH HEXFET 17.8mOhm 24nC | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 60 V | 8 A | 17.8 mOhms | 24 nC | ||||||||
|
|
1,481
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 40 A | 16 mOhms | Enhancement | QFET | |||||
|
|
879
In-stock
|
Fairchild Semiconductor | MOSFET TO-220 N-CH ENHANCE | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 75 A | 13 mOhms | Enhancement | ||||||
|
|
1,610
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 2.4 mOhms | 120 nC | ||||||||
|
|
1,025
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60V 4.1MOHM TO-220F | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 77 A | 4.1 mOhms | 4 V | 69 nC | PowerTrench | |||||
|
|
2,056
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 240A D2PAK | SMD/SMT | TO-263-7 | Tube | 1 Channel | Si | N-Channel | 60 V | 338 A | 1.4 mOhms | 3.7 V | 354 nC | StrongIRFET | |||||||
|
|
980
In-stock
|
Fairchild Semiconductor | MOSFET NCH 60V 3.0Mohm | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 193 A | 3.2 mOhms | PowerTrench | ||||||||
|
|
1,176
In-stock
|
Fairchild Semiconductor | MOSFET 60V 80a .38 Ohms/VGS=1V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.8 mOhms | Enhancement | PowerTrench | |||||
|
|
10,080
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench 60V 313A 2mOhm | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 313 A | 1.65 mOhms | ||||||||
|
|
786
In-stock
|
Fairchild Semiconductor | MOSFET NCH 60V 3.0Mohm | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 193 A | 3.2 mOhms | PowerTrench | |||||||
|
|
1,076
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 370A 2.4mOhm 91nC Log Lvl | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2.8 mOhms | 91 nC | ||||||||
|
|
105,900
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | ||||||||
|
|
2,588
In-stock
|
IR / Infineon | MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 9.4 mOhms | 26 nC | ||||||||
|
|
1,940
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 85 nC | ||||||||
|
|
2,991
In-stock
|
STMicroelectronics | MOSFET N-channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 14 mOhms | Enhancement | ||||||
|
|
436
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 4 V | 200 nC | |||||
|
|
2,178
In-stock
|
Infineon Technologies | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 305 A | 2.2 mOhms | 1 V | 172 nC | Enhancement | StrongIRFET | |||
|
|
5,909
In-stock
|
STMicroelectronics | MOSFET N-channel 60 V, 0.0025 mOhm typ., 80 A STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3 mOhms | 2 V | 40 nC | Enhancement | ||||
|
|
698
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.5mOhms 200nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 200 nC | ||||||||
|
|
3,132
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | Enhancement | OptiMOS | |||||
|
|
2,865
In-stock
|
IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 22 nC | |||||||||
|
|
2,194
In-stock
|
STMicroelectronics | MOSFET N-Ch 60V 6.6mOhm 77A STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 77 A | 7.9 mOhms | 76 nC | ||||||||
|
|
706
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | |||
|
|
954
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.3 mOhms | 2 V | 183 nC | Enhancement | ||||
|
|
3,134
In-stock
|
Fairchild Semiconductor | MOSFET TO-251AA N-Ch Power | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 11 A | 107 mOhms | Enhancement | ||||||
|
|
2,901
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 13.6 A | 110 mOhms | Enhancement | QFET |
