- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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615
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | SuperFET II FRFET | ||||
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651
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | 145 nC | Enhancement | ||||||
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327
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 52 mOhms | 3 V | 68 nC | Enhancement | CoolMOS | ||||
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585
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.067 Ohm 35 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 67 mOhms | 4 V | 82 nC | Enhancement | MDmesh | ||||
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224
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 110 mOhm, FRFET | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | |||||
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124
In-stock
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STMicroelectronics | MOSFET N-channel 600V, 35A FDMesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | Enhancement | |||||||
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60
In-stock
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IXYS | MOSFET 500V 64A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 35 A | 95 mOhms | Enhancement | HyperFET | ||||||
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24
In-stock
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IXYS | MOSFET 35 Amps 600V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 90 mOhms | 3 V | 60 nC | Enhancement | CoolMOS | ||||
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785
In-stock
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Fairchild Semiconductor | MOSFET 35A, 600V SuperFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 79 mOhms | 5 V | 139 nC | Enhancement | SuperFET | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 80 mOhms | 3 V | 115 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 300V 35A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 35 A | 100 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 35 Amps 500V 0.15 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 35 A | 150 mOhms | Enhancement | HyperFET | ||||||
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VIEW | STMicroelectronics | MOSFET N-channel 600V Power MDmesh | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 88 mOhms | Enhancement |