Build a global manufacturer and supplier trusted trading platform.
Vgs - Gate-Source Voltage :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXTT30N60L2
1+
$13.750
10+
$12.650
25+
$12.120
100+
$10.680
RFQ
56
In-stock
IXYS MOSFET 30 Amps 600V   SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 30 A 240 mOhms 4.5 V 335 nC Enhancement  
FMM50-025TF
1+
$14.910
10+
$13.710
25+
$13.140
100+
$11.580
RFQ
25
In-stock
IXYS MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 250V 3... 30 V Through Hole ISOPLUS-i4-PAK-5 - 55 C + 150 C Tube   Si N-Channel 250 V 30 A 60 mOhms 4.5 V 78 nC    
IXTH30N50L2
1+
$10.820
10+
$9.950
25+
$9.530
100+
$8.400
RFQ
53
In-stock
IXYS MOSFET 30.0 Amps 500V 0.002 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 30 A 200 mOhms 4.5 V 240 nC Enhancement Linear L2
IXTQ30N50L2
1+
$11.660
10+
$10.540
25+
$10.050
100+
$8.730
RFQ
20
In-stock
IXYS MOSFET LINEAR L2 SERIES MOSFET 500V 30A 20 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 30 A 200 mOhms 4.5 V 240 nC Enhancement Linear L2
IXTH30N60L2
1+
$12.910
10+
$11.880
25+
$11.380
100+
$10.030
RFQ
529
In-stock
IXYS MOSFET 30 Amps 600V 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 30 A 240 mOhms 4.5 V 335 nC Enhancement Linear L2
IXTQ30N60L2
30+
$10.920
120+
$9.620
270+
$9.150
510+
$8.560
VIEW
RFQ
IXYS MOSFET 30 Amps 600V 20 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 30 A 240 mOhms 4.5 V 335 nC Enhancement Linear L2
Page 1 / 1