- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,348
In-stock
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Infineon Technologies | MOSFET 55V DUAL N / P CH 20V VGS 55V BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | Enhancement | |||||
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3,533
In-stock
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IR / Infineon | MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | Enhancement | |||||
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707
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 155 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 6.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 750 mOhms | 3 V | 24 nC | CoolMOS | ||||
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2,974
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6mOhms 24nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 16.6 A | 7.4 mOhms | 24 nC | Enhancement |
