- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,171
In-stock
|
onsemi | MOSFET NFET DPAK 400V 1.7A 5.5OH | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 1.7 A | 4.5 Ohms | 1.6 V | 5.5 nC | |||||
|
|
VIEW | IXYS | MOSFET 30 Amps 400V 0.16 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 30 A | 160 mOhms | Enhancement | HyperFET | |||||
|
|
14
In-stock
|
Microsemi | MOSFET N Channel MOSFET | 20 V | Through Hole | TO-39-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 400 V | 3 A | 1.1 Ohms | 2 V | 34.75 nC | Enhancement |
