- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
3,378
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel Power Trench | 12 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 6.1 mOhms | 19.4 nC | Enhancement | PowerTrench | |||
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GET PRICE |
1,731
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 220 A | 6.1 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||
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GET PRICE |
1,850
In-stock
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Fairchild Semiconductor | MOSFET TO-leadless MV7 80V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 220 A | 6.1 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||
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GET PRICE |
3,979
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 78.6 A | 6.1 mOhms | - 3.1 V | 58 nC | Enhancement | OptiMOS | ||
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GET PRICE |
947
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PT 6V 8A 7mOhm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 6.1 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
800
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL POWERTRENCH MOSFET | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 6.1 mOhms | 4 V | 51 nC | |||||
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GET PRICE |
4,017
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 55A 31nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 55 A | 6.1 mOhms | 2 V to 4 V | 31 nC | Enhancement | |||
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GET PRICE |
218
In-stock
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Toshiba | MOSFET N-Ch 60V 1990pF 29nC 50A 34W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.1 mOhms | 1.5 V | 28.3 nC | Enhancement | |||||
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GET PRICE |
1,500
In-stock
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onsemi | MOSFET AFSM T6 40V LL U8FL WF | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 51 A | 6.1 mOhms | 1.2 V | 16 nC | Enhancement | |||
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GET PRICE |
1,500
In-stock
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onsemi | MOSFET AFSM T6 40V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 51 A | 6.1 mOhms | 1.2 V | 16 nC | Enhancement | |||
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VIEW | IXYS | MOSFET 120 Amps 40V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 6.1 mOhms | 4 V | 58 nC | Enhancement | TrenchT2 | |||
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VIEW | IXYS | MOSFET 120 Amps 40V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 6.1 mOhms | Enhancement | ||||||
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GET PRICE |
5,000
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 78.6 A | 6.1 mOhms | - 3.1 V | 58 nC | Enhancement |
