- Manufacture :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
20,568
In-stock
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onsemi | MOSFET Single N-CH 60V 11A, 37A | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 10.1 mOhms | 1.5 V to 2.3 V | 28 nC | ||||
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GET PRICE |
555
In-stock
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Texas instruments | MOSFET -20V, P-channel NexFET Pwr MOSFET | 12 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 60 A | 10.1 mOhms | - 0.9 V | 10.8 nC | Enhancement | NexFET | ||
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GET PRICE |
379
In-stock
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Toshiba | MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 44 A | 10.1 mOhms | 2 V to 4 V | 22 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET MOSFET N-CH 80V 13A | SOP-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 13 A | 10.1 mOhms | |||||||||||
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VIEW | IR / Infineon | MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC | 20 V | SMD/SMT | DirectFET-S1 | Reel | 1 Channel | Si | N-Channel | 25 V | 39 A | 10.1 mOhms | 8.1 nC |
