- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,997
In-stock
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Vishay Semiconductors | MOSFET -12V Vds -60A Id AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 60 A | 4.8 mOhms | - 1.5 V | 150 nC | Enhancement | ||||
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3,218
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 18 A | 4.8 mOhms | Enhancement | PowerTrench SyncFET | |||||
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1,114
In-stock
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Fairchild Semiconductor | MOSFET Discrete Auto N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.8 mOhms | Enhancement | PowerTrench | |||||
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11,755
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 4.8 mOhms | 50 nC | Enhancement | OptiMOS | ||||
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GET PRICE |
78,180
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | ||
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880
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.8 mOhms | 1.2 V | 233 nC | Enhancement | OptiMOS | |||
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2,667
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.8 mOhms | 1.8 V | 31 nC | Enhancement | ||||
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4,044
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
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3,830
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
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1,384
In-stock
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onsemi | MOSFET T6 40V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 107 A | 4.8 mOhms | 1.2 V | 35 nC | Enhancement | ||||
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3,131
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 54 A | 4.8 mOhms | 17 nC | StrongIRFET | |||||||
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800
In-stock
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Infineon Technologies | MOSFET 100V 97A 9mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 87 nC | ||||||||
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988
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.8 mOhms | 1.2 V | 233 nC | Enhancement | ||||
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204
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 127A 6mOhm 120nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||||
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370,000
In-stock
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Infineon Technologies | MOSFET 100V 127A 6mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||||
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2,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.8 mOhms | Enhancement | OptiMOS | |||||
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3,238
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 71A 38nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 4.8 mOhms | 2 V to 4 V | 38 nC | Enhancement | ||||
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347
In-stock
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Texas instruments | MOSFET N-Channel, 3.4mOhm 80V | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.8 mOhms | 2.2 V | 48 nC | Enhancement | NexFET | |||
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500
In-stock
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Texas instruments | MOSFET 30V NCH NexFET | 20 V | SMD/SMT | VSONP-8 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 4.8 mOhms | 1.4 V | 27 nC | NexFET | ||||
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GET PRICE |
8,000
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.8 mOhms | 3.7 V | 86 nC | StrongIRFET | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.8 mOhms | |||||||||||
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4,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
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VIEW | Toshiba | MOSFET MOSFET N-CH 30V, 38A | SOP-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 38 A | 4.8 mOhms | |||||||||||
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2,294
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 128 A | 4.8 mOhms | 2 V | 36 nC | Enhancement | StrongIRFET |
