- Mounting Style :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
2,462
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | ||||
|
|
GET PRICE |
976
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | ||||
|
|
GET PRICE |
29,889
In-stock
|
Nexperia | MOSFET TAPE13 PWR-MOS | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 870 mA | 440 mOhms | Enhancement | |||||
|
|
GET PRICE |
38,800
In-stock
|
Fairchild Semiconductor | MOSFET 650V 15A 0.44OHMS NCH POWER TRENCH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 440 mOhms | Enhancement | |||||
|
|
GET PRICE |
398
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26.7 A | 440 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | ||
|
|
GET PRICE |
480
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11A TO220FP CoolMOS CFD | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 440 mOhms | Enhancement | CoolMOS | ||||
|
|
GET PRICE |
300
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 440 mOhms | Enhancement | CoolMOS | ||||
|
|
GET PRICE |
37
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 440 mOhms | 140 nC | HyperFET | ||||||
|
|
GET PRICE |
7
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 30 A | 440 mOhms | 4 V | 260 nC | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 22 nC | Enhancement | ||||
|
|
VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 440 mOhms | 140 nC | HyperFET | |||||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 440 mOhms | CoolMOS | |||||||||
|
|
VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 22 nC | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET N-Ch FET RDS .23 Ohm IDSS 100uA VDS 60V | SMD/SMT | SC-62-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 2 A | 440 mOhms | ||||||||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CFD | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 440 mOhms | Enhancement | CoolMOS |
