- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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29,889
In-stock
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Nexperia | MOSFET TAPE13 PWR-MOS | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 870 mA | 440 mOhms | Enhancement | |||||
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7
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 30 A | 440 mOhms | 4 V | 260 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 22 nC | Enhancement |
