- Manufacture :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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961
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power ... | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 70 A | 3.1 mOhms | 2 V | 55 nC | Enhancement | |||
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51
In-stock
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Toshiba | MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.1 mOhms | 2 V to 4 V | 140 nC | Enhancement |
