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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRLS3036TRL7PP
1+
$3.290
10+
$2.790
100+
$2.420
250+
$2.300
800+
$1.730
RFQ
616
In-stock
IR / Infineon MOSFET MOSFT 60V 300A 1.9mOhm 110nC LogLv7   SMD/SMT TO-252-3   + 175 C Reel 1 Channel Si N-Channel 60 V 300 A 1.9 mOhms 2.5 V 160 nC  
TK100S04N1L,LQ
1+
$2.550
10+
$2.060
100+
$1.640
500+
$1.440
2000+
$1.100
RFQ
2,000
In-stock
Toshiba MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 100 A 1.9 mOhms 2.5 V 76 nC Enhancement
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