- Mounting Style :
- Qg - Gate Charge :
- Tradename :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,420
In-stock
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onsemi | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 140 A | 1.9 mOhms | 2 V | 32 nC | Enhancement | |||||
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1,287
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 1.9 mOhms | Enhancement | PowerTrench | ||||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 1.9 mOhms | Enhancement | |||||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 31 A | 1.9 mOhms | Enhancement | PowerTrench | ||||||
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616
In-stock
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IR / Infineon | MOSFET MOSFT 60V 300A 1.9mOhm 110nC LogLv7 | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 1.9 mOhms | 2.5 V | 160 nC | ||||||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.9 mOhms | 3 V | 130 nC | Enhancement | |||||
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990
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.9 mOhms | 3 V | 130 nC | Enhancement | |||||
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76
In-stock
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IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.9 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | ||||
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85
In-stock
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IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.9 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | ||||
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33,000
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 30 V | 125 W | 1.9 mOhms | 1.7 V | 40 nC | Enhancement | ||||||
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5,000
In-stock
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Toshiba | MOSFET N-Ch 60V 4180pF 60nC 160A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 1.9 mOhms | 1.5 V | 60 nC | Enhancement | ||||||
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2,000
In-stock
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Toshiba | MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 2.5 V | 76 nC | Enhancement | |||||
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3,750
In-stock
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onsemi | MOSFET T6-D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 140 A | 1.9 mOhms | 2 V | 32 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 60 V | 270 A | 1.9 mOhms | 91 nC | ||||||||||
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VIEW | Fairchild Semiconductor | MOSFET 30V N-Channel PwrTrch MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 1.9 mOhms | Enhancement | PowerTrench | ||||||
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2,394
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSONP -55... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.9 mOhms | 1.5 V | 82 nC | Enhancement |