- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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99,510
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 1.6A 220mOhm 2.5nC Qg | 16 V | SMD/SMT | SOT-23-3 | Reel | Si | N-Channel | 100 V | 1.6 A | 235 mOhms | 2.5 nC | |||||||
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1,824
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14 A | 235 mOhms | 25 nC | Enhancement | |||
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GET PRICE |
2,931
In-stock
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Diodes Incorporated | MOSFET P-Chan 100V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4.6 A | 235 mOhms | - 4 V | 16.5 nC | Enhancement | ||
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GET PRICE |
1,066
In-stock
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STMicroelectronics | MOSFET N-Channel 250V Pwr Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 13 A | 235 mOhms | Enhancement | ||||
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GET PRICE |
284
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 14 A | 235 mOhms | 25 nC | Enhancement | |||
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GET PRICE |
639
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 13A 235mOhm 25nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 13 A | 235 mOhms | 25 nC | Enhancement | |||
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GET PRICE |
272
In-stock
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STMicroelectronics | MOSFET N-Channel 650V Pwr Mosfet | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 13 A | 235 mOhms | Enhancement |
