- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
206,500
In-stock
|
onsemi | MOSFET 20V 540mA Dual N-Channel w/ESD | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 700 mOhms | Enhancement | |||||
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GET PRICE |
125
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 Volt 13A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 13 A | 700 mOhms | 190 nC | Enhancement | ||||
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GET PRICE |
675
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 700 mOhms | 1 V | 227 nC | Enhancement | OptiMOS | ||
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GET PRICE |
15,022
In-stock
|
onsemi | MOSFET NFET SOT883 20V 245MA 1.5 | SMD/SMT | XDFN3-3 | Reel | Si | N-Channel | 20 V | 361 mA | 700 mOhms | ||||||||||
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GET PRICE |
15,600
In-stock
|
onsemi | MOSFET 20V 540mA Dual N-Channel w/ESD | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 570 mA | 700 mOhms | 1 V | 1.5 nC | Enhancement | |||
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GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET NCH 6V 7A FDMESH FDMesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 700 mOhms | Enhancement | |||||
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GET PRICE |
14,998
In-stock
|
Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | |||
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GET PRICE |
25,000
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 5.5 A | 700 mOhms | Enhancement | |||||
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GET PRICE |
626
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 700 mOhms | Enhancement | UniFET | ||||
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GET PRICE |
11,038
In-stock
|
Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | |||
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GET PRICE |
492
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 6.6A TO220FP CoolMOS CFD | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6.6 A | 700 mOhms | Enhancement | CoolMOS | ||||
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GET PRICE |
5,075
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 2-DFN1006-3 T&R 3K | 6 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 810 mA | 700 mOhms | 1 V | 736.6 pC | Enhancement | |||
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GET PRICE |
5,505
In-stock
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Diodes Incorporated | MOSFET SINGLE P-CHANNEL | 8 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 430 mA | 700 mOhms | Enhancement | |||||
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GET PRICE |
2,733
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 3K | 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1 A | 700 mOhms | 500 mV | 2 nC | Enhancement | |||
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GET PRICE |
80
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 1.0Ohm -20V -600mA | +/- 8 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 600 mA | 700 mOhms | - 1 V | 800 pC | Enhancement | |||
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GET PRICE |
30
In-stock
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IXYS | MOSFET 14 Amps 800V 0.72 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 700 mOhms | Enhancement | HyperFET | ||||
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GET PRICE |
14,200
In-stock
|
Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 1KV 15A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
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GET PRICE |
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 700 mOhms | 1 V | 227 nC | Enhancement | OptiMOS | ||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.7 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 14 Amps 800V 0.7 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 700 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.7 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 15 Amps 1000V 0.725 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 700 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 13 Amps 800V 0.8 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 700 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 14 Amps 800V 0.7 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 700 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 13 Amps 800V 0.8 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 700 mOhms | Enhancement | HyperFET |
