- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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7,239
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 85 A | 6 mOhms | 3.7 V | 73 nC | StrongIRFET | |||
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772
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | |||
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673
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | |||
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242
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET | |||
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590
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 76 A | 8.4 mOhms | 3.7 V | 73 nC | StrongIRFET |
