- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,566
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.2 mOhms | 3.7 V | 84 nC | Enhancement | StrongIRFET | ||||
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1,578
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 75 V | 68 A | 6.6 mOhms | 3.7 V | 110 nC | Enhancement | StrongIRFET | ||||||
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863
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 183 A | 3.5 mOhms | 3.7 V | 270 nC | Enhancement | StrongIRFET | ||||||
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668
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 197 A | 3.05 mOhms | 3.7 V | 180 nC | Enhancement | StrongIRFET | ||||
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66
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.7 V | 110 nC | Enhancement | |||||
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225
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 500 mOhms | 3.7 V | 15 nC | Enhancement | |||||
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25,000
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 130 mOhms | 3.7 V | 48 nC | Enhancement | |||||
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86
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 130 mOhms | 3.7 V | 48 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch DTMOSIV 600 V 130W 1350pF 15.8A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 3.7 V | 38 nC | Enhancement |