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Vds - Drain-Source Breakdown Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SQJ412EP-T1_GE3
1+
$2.230
10+
$1.790
100+
$1.440
500+
$1.260
3000+
$0.966
RFQ
885
In-stock
Vishay Semiconductors MOSFET 40V 32A 83W AEC-Q101 Qualified +/- 20 V SMD/SMT PowerPAK-SO-8L-4 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 32 A 0.0035 Ohms 1.5 V 120 nC Enhancement TrenchFET
SQJ410EP-T1_GE3
3000+
$0.963
6000+
$0.927
9000+
$0.857
VIEW
RFQ
Siliconix / Vishay MOSFET N-Channel 30V AEC-Q101 Qualified +/- 20 V SMD/SMT PowerPAK-SO-8L-4 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 32 A 0.0035 Ohms 1.5 V 110 nC Enhancement TrenchFET
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