- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Tradename :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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90
In-stock
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IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | ||||
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526
In-stock
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IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP | ||||
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52
In-stock
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IXYS | MOSFET 2500V 5A HV Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 5 A | 8.8 Ohms | 2 V to 5 V | 200 nC | Enhancement | |||||
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54
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | 200 nC | HyperFET | ||||||||
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10
In-stock
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IXYS | MOSFET 2500V 5A HV Power MOSFET | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 5 A | 8.8 Ohms | 2 V to 5 V | 200 nC | Enhancement | |||||
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52
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/50A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 72 mOhms | 200 nC | HyperFET | ||||||||
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41
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | 200 nC | Depletion | ||||||
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19
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 500 V | 63 A | 65 mOhms | 200 nC | HyperFET | ||||||||
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18
In-stock
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IXYS | MOSFET DIODE Id26 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 200 mOhms | 5 V | 200 nC | Enhancement | PolarHV, HiPerFET | ||||
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22
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | 200 nC | HyperFET | ||||||||
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4
In-stock
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IXYS | MOSFET 36 Amps 800V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 39 A | 190 mOhms | 5 V | 200 nC | Enhancement | PolarHV, HiPerFET | ||||
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90
In-stock
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IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP |