- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,400
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC | 20 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 14 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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5,085
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | +/- 20 V | Through Hole | TO-251-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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5,686
In-stock
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IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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8,900
In-stock
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IR / Infineon | MOSFET 30V SINGLE N-CH 4.1mOhms 14nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 6.3 mOhms | 1.8 V | 31 nC | |||||
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8,000
In-stock
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IR / Infineon | MOSFET MOSFT 80V 9.2A 15mOhm 31nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 9.2 A | 15 mOhms | 31 nC | ||||||||
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8,404
In-stock
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IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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1,960
In-stock
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IR / Infineon | MOSFET 55V SINGLE N-CH 13.6mOhms 31nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.6 mOhms | 4 V | 31 nC | Enhancement | ||||
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2,148
In-stock
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IR / Infineon | MOSFET MOSFT 20V 120A 21nC 4.2mOhm Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 120 A | 4 mOhms | 2.45 V | 31 nC | |||||||
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1,012
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 6.6mOhms 31nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 16 A | 10.2 mOhms | 31 nC |