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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge
STW18N65M5
600+
$3.160
1200+
$2.660
3000+
$2.530
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RFQ
STMicroelectronics MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET 25 V Through Hole TO-247-3 Tube 1 Channel Si N-Channel 650 V 9.4 A 220 mOhms 5 V 31 nC
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