- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,523
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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1,141
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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838
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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394
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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492
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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467
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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1,396
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 5.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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57
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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70
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement |