- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,101
In-stock
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onsemi | MOSFET NFET TO220FP 600V 6A .98R | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6 A | 980 mOhms | 3 V | 31 nC | ||||||
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994
In-stock
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onsemi | MOSFET NFET 600V 6A 980 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.1 A | 980 mOhms | 3.9 V | 31 nC | |||||
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450
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16.8 A | 207 mOhms | 3.5 V | 31 nC | Enhancement | CoolMOS | |||
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432
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16.8 A | 207 mOhms | 3.5 V | 31 nC | Enhancement | CoolMOS |
